| 摘要 |
<p>PURPOSE:To obtain a semiconductor element for a solid-state image pickup device having high sensitivity by forming a convex lens-shaped unit made of Si3N4 film at light incident side of the element when reading out the incident light intensity of a plurality of semiconductor elements arranged in a matrix shape as an electric signal. CONSTITUTION:A thick field oxide film 8 is formed on the surface periphery of an Si substrate 1, and a reverse conductive type photoreceiving region 2 to the substrate and a region 12 made of entirely the same material as the region 2 are formed by diffusing in the surface layer of the substrate surrounded by the film 8. Then, a transparent SiO2 film 3 in which a polycrystalline Si gate 6 is buried is coated between the regions 2 and 12 on the entire surface, a window is opened corresponding to the region 12, aluminum wirings 7 are connected as a normal one semiconductor element. In this construction, a convex lens-shaped unit 5 made of Si3N4 having larger refractive index than the film 3 is formed only on the film 3 corresponding to the region 2 to increase the light incident intensity to the region 2, and a transparent SiO2 film 3 is coated on the entire surface which includes the region 2.</p> |
