| 摘要 |
PURPOSE:To inexpensively obtain a high density, then, and small-sized semiconductor device by forming metal projections corresponding to semiconductor elements on a wiring pattern on an insulating substrate, positioning the element electrodes, pressing and heating them. CONSTITUTION:A Cu pattern is formed on an insulating substrate 10, and AU projections 12 are formed by plating without primary base treatment at the positions corresponding to the aluminum electrodes of semiconductor elements. Then, the electrodes 14, 14' of the element are pressed and heated at 15, 15' by positioning the projections 12. The electrodes 14, 14' are unnecessary to treat, but may be pressed at 300-550 deg.C under the pressure of 30-150kg per 50X50mum of area. Since the Au projections have weak bonding strength at plating time, they can be readily pressed and extended by pressing, the oxide of the aluminum surface is pressed and extended to form an Au-Al alloy to increase the bonding strength, thereby accelerating the alloying at high temperature. According to this construction, the conventional connecting region is unnecessary to perform the connection in the chip size, thereby obtaining small-sized thin semiconductor device. |
