| 摘要 |
PURPOSE:To avoid the increase in wiring resistance and disconnection of throughholes by a method wherein, after forming a lower layer wiring, overall surface of the lower layer wiring leaving the photoresist to form the wiring thereon is coated with coating solution containing silicon oxide and then the photoresist is removed. CONSTITUTION:A wiring material layer as the first layer is coated with photoresist 13 and then the first layer wiring 14 is formed on a surface protective film 12 by etching the material layer using the photoresist as a mask. Later when the overall surface of the first layer wiring 14 leaving the photoresist 13 thereon is coated with silica film 15 comprising coating solution containing silicon oxide and solidified, the recessions other than the first layer wiring 14 are thickly coated with the silica film 15 to be buried in the step difference parts of the first layer wiring 14 while the surface of photoresist on the first layer wiring 14 is thinly coated with the same. Finally the silica film 15 is removed when the photoresist 13 is removed by immersing the whole body in organic solvent. Through these procedures, the silica film 15 can be removed from the surface of the first layer wiring 14 to be left only in the recessions other than wiring 14 being buried in the step difference parts.
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