| 摘要 |
PURPOSE:To contrive the elimination of the load on the second coating silicon compound in the multilayer resist technique using a coating silicon compound for the second layer by obtaining the effect in using an adhesive assistant by forming a thin oxide film before forming the first organic substance layer, on the film to be processed. CONSTITUTION:A substantially thin oxide film 3 is formed, on a film to be processed 2, for example, of polysilicon which is formed on a semiconductor substrate 1, thereby obtaining the effect of hexamethyl disilazane as an adhesive assistant. This effect is characterized by making an oxide film 3 have plural methyl radicals and accordingly, after the treatment with hexamethyl disilazane, the bond between the oxide film 3 comprising methyl radicals and the first organic substance layer becomes strong and a distortion due to a heat treatment is reduced. Therefore, by the later steps, a good pattern without a crack of the coating silicon compound pattern 5' which is obtained at last can be formed stably. |
