PREPARATION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL HAVING UNIFORM CHARACTERISTIC

摘要

PURPOSE:To make electric characteristics uniform not only in the direction of crystal face but also in the axial direction of the single crystal by cooling an ingot of a compound semiconductor single crystal after completing crystal growth in a device for the crystal growth to a specified temp. then subjecting to annealing in inert gas or in vacuum. CONSTITUTION:An ingot of a compound semiconductor single crystal is cooled after completing crystal growth temporarily to a temp. by 600-900 deg.C lower temp. than its m.p. in a crystal growth device. Then, it is heated-treated at 700-1,000 deg.C for 6-60hr in inert gas or an vacuum. By introducing, as described above, a step to cool by 600-900 deg.C lower temp. than the m.p. temporarily without cooling to room temp., the effect as described above is obtd.