| 摘要 |
PURPOSE:To improve the quality of a single crystal in the preparation of a single crystal by the Bridgman method by dipping a gas introducing tube to the inside of melt of a starting material for the crystal and conducting the growth of the single crystal while flowing atmosphere gas through the inside of the melt. CONSTITUTION:A crucible 2 is used together with a heating device 1 which serves to transform a solid starting material 10 for the crystal supplied continu ously by a fixed amt. per unit time corresponding to the growth rate of the single crystal 3 to the crucible 2 through a feeding mechanism 8 of the starting material and a feeding pipe 9, to the melt 4. Relative relation of the heating device 1 to the crucible 2 is changed continuously by moving the crucible 2 downward through the heating device with a specified velocity by means of a crucible moving mechanism 6, thus, the melt 4 is coagulated from below and the single crystal is prepd. In addn. to the above-described constitution, a gas introducing pipe 11 for passing the atmosphere gas used for the prepn. of the single crystal 3 through the melt 4 is provided. Many small holes are perforated in the part of the gas introducing pipe 11 dipped in the melt 4.
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