| 摘要 |
PURPOSE:To improve characteristics, by simultaneously forming the base region of a bipolar transistor and the channel region of a junction type field effect transistor by epitaxial growing and isolation diffusion. CONSTITUTION:On a P-type semiconductor substrate 11, an N-type epitaxial layer 12 is formed. P-type isolation diffusion is performed and a P-type isolating region 13 is formed. Thereafter, a P-type epitaxial layer 14 is formed on the N-type epitaxial layer 12. The P-type epitaxial layer 14 is isolated by an N-type insulating region 15, which is formed by N-type isolation diffusion. Then a P-type base region 14-1 of a Bi-T and a P-type channel region 14-2 of an FET are formed. A P-type base contact region 16 of the Bi-T and a source region 17 and a drain region 18 of the J-FET are simultaneously formed. An N-type emitter region 20 of the Bi-T and an N-type gate region 21 of the J-FET are formed by diffusion. Thus crystal defects become few and crystalline property becomes excellent. Dispersion in characteristics such as low noise property, a current-voltage characteristic and withstanding voltage is less, and the excellent characteristics are obtained.
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