SCHOTTKY-BARRIER MOS DEVICES

摘要

SCHOTTKY-BARRIER MOS DEVICES Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions (44,45) surrounding the Schottky-barrier source and drain contacts (35,36). For p-channel devices, acceptor doping is carrier out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).