| 摘要 |
PURPOSE:To prevent the generation of defects due to a distortion of slip or the like which becomes a problem according to the enhancement in diameter of a substrate by doping nitrogen in the edge portion of the Si substrate fabricated by Czychralski method. CONSTITUTION:In a form of ingot pulled by Czychralski method, the silicon is put in a high-pressure nitrogen plasma atmosphere and is subjected to the long-time treatment at a high temperature of 1,300 deg.C or more, after which usual cutting and polishing are done to process the silicon into wafers. In the substrate thus fabricated, nitrogen fixes the slip or the like which is caused during a diffusion process by softening caused by the reduction of interstitial oxygen due to the intrinsic gettering process and which enters from the edge portion of the substrate, so that the inside part is kept in a no-defective state.
|
