发明名称 HEAT TREATMENT APPARATUS
摘要 PURPOSE:To make temperature control easy, by applying the dual structured quartz tube between the semiconductor wafer and the heating means, installing a vacuum chamber in the tube, and performing exhaust and suction of this vacuum chamber. CONSTITUTION:The quartz tube 20 is heated by supplying a current through the heater 28, and the vacuum chamber 34 is kept in the high vacuum state in order that the heat may not conduct to the treatment room 24 for the quartz tube 20. The wafer 16 is set on the quartz boat 18, which is carried into the treatment chamber 24. When the gas of high thermal conductivity is gradually introduced into the vacuum chamber 34 so as to keep normal or higher pressure, the heat conducts from the side of the outer wall 30 of quartz tube 20 to the side of the inner wall 32 of quartz tube 20. This heat conduction is nearly uniform for the whole part of the treatment chamber 24, so that the thermal condition of the wafer 16 is constant independently of its position, which makes thermal control easy.
申请公布号 JPS61285713(A) 申请公布日期 1986.12.16
申请号 JP19850127075 申请日期 1985.06.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUDO KOJI
分类号 H01L21/205;H01L21/22;H01L21/223;H01L21/31 主分类号 H01L21/205
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