发明名称 |
Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon |
摘要 |
Full oxide isolation of epitaxial islands can be accomplished by oxidizing suitably porous silicon. The porous silicon can be created by anodizing highly doped n+ silicon in hydroflouric acid. Lesser doped epitaxial regions will not become porous and will become isolated islands suitable for the fabrication of semiconductor devices.
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申请公布号 |
US4628591(A) |
申请公布日期 |
1986.12.16 |
申请号 |
US19840666698 |
申请日期 |
1984.10.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ZORINSKY, ELDON J.;SPRATT, DAVID B. |
分类号 |
H01L21/205;H01L21/306;H01L21/762;(IPC1-7):H01L21/306;H01L21/76 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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