| 摘要 |
PURPOSE:To prevent deterioration in withstanding voltage due to pattern deviation, by arranging and forming source and drain electrodes at the inner side of an ion implanted operating layer, and gradually expanding the interval between the source and drain electrodes outward in the vicinity of the input/output part of a gate electrode. CONSTITUTION:Source and drain electrodes 2 and 4 are formed at the inner side of an ion implanted operating layer 5. The interval between the source and drain electrodes 2 and 4 is gradually expanded outward in the vicinity of the input/output part of a gate electrode 3a. The distance (d) between the inner side of the boundary of the ion implanted operating layer 5 and the source and drain electrodes 2 and 4 can be d=3mum, when mask aligning accuracy is + or -1.5mum. This value is larger than ordinary mask aligning accuracy. Even if mask alignment is deviated, the basic configuration of the element itself is not changed, and stable performance is obtained in this electrode arrangement. The reason why the electrodes are gradually expanded outward in the vicinity of the input/output part is to avoid concentration of the electric field at the electrode pattern corner.
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