发明名称 |
Read-only memory and method of manufacturing the same |
摘要 |
A read-only memory has memory cells each with a vertical metal oxide semiconductor field effect transistor and a bit line. The vertical metal oxide semiconductor field effect transistor has a gate electrode serving as a word line, a source, a drain, and a vertical channel region between the source and drain constituted by first and second diffusion layers. The gate electrode is formed on a side wall of a trench, which has a pair of side walls substantially perpendicular to a major surface of a semiconductor substrate of a first conductivity type and an interconnecting bottom surface substantially perpendicular to the side wall surfaces. The first and second diffusion layers of a second conductivity type are formed in an upper portion of the semiconductor substrate and in a bottom of the trench, respectively. The bit lines are formed in a predetermined pattern. One of the first and second diffusion layers is connected to the bit line through a contact hole and the other of the first and second diffusion layers is used as a common current line. A method of manufacturing the read-only memory is also proposed.
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申请公布号 |
US4630237(A) |
申请公布日期 |
1986.12.16 |
申请号 |
US19850759009 |
申请日期 |
1985.07.24 |
申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
MIURA, KENJI;NAKAJIMA, SHIGERU;MINEGISHI, KAZUSHIGE;SOMATANI, TOSHIFUMI;MORIE, TAKASHI;BABA, TATSUO |
分类号 |
G11C17/08;H01L21/8246;H01L21/8247;H01L27/10;H01L27/112;H01L27/115;H01L29/78;(IPC1-7):G11C11/40;G11C13/00 |
主分类号 |
G11C17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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