| 摘要 |
PURPOSE:To implement high reliability, by forming an insulating film on the surface of a substrate having a step part, flattening the surface of the insulating film with a silicon oxide film by a spin-on-glass method, performing etch back, and removing a part of the silicon oxide film and a part of the insulating film. CONSTITUTION:On a silicon substrate 1, on which element regions are formed, an aluminum thin film is formed. Thereafter, a wiring layer 2 is formed. Then, a silicon dioxide film 3, in which phosphorus is doped, is deposited as an interlayer insulating film. Thereafter, the silicon substrate is set on a spinner, and a silicon oxide film 4 is formed by a spin-on-glass method. Then, etching back is performed by a reactive ion etching method, and the silicon oxide film 4 and the protruded part of the PSG film 3 are removed. A contact hole 5 is provided in the PSG film 3. An aluminum thin film is deposited and a wiring layer pattern 6 is formed. Thus, wire breakdown and poor contact are decreased, and the highly reliable device can be obtained.
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