| 摘要 |
A MOS dynamic RAM consists of integrated memory cells each having a MOSFET and a MOS capacitor. The MOS dynamic RAM comprises a semiconductor substrate of a first conductivity type on which periodic projections and recesses are formed, a source region of a second conductivity type formed in the upper surface of each projection, a drain region of the second conductivity type formed in a bottom portion of each projection, a channel region of the first conductivity type sandwiched between the source and drain regions, a gate insulating film formed on a side wall of each projection between the source and drain regions, a gate electrode formed on the gate insulating film, a first insulating film formed on the source region, and a first electrode of the MOS capacitor formed on the first insulating film. The MOSFET is constituted by the source, drain and channel regions, the gate insulating film and the gate electrode. The MOS capacitor is constituted by the source region, the first insulating film and the first electrode, and the source region serves as the second electrode thereof. The gate electrodes serve as word lines, and the first electrodes of MOS capacitor serve as bit lines.
|
