| 摘要 |
PROBLEM TO BE SOLVED: To moderate the switching waveform of a high-speed diode.SOLUTION: A semiconductor device has a PiN diode structure which passes current in a longitudinal direction. A plurality of carrier accumulation layers (N+ layers) 11 which have concentrations different from each other are arranged in a region of a drift layer 4 outside a depletion layer region 10 formed when reverse bias is applied. The carrier accumulation layers 11 are arranged from the device center side toward the end side; and concentrations of the carrier accumulation layers 11 are gradually increased from the device center side toward the end side. The plurality of carrier accumulation layers 11 control extension of the depletion layer region 10.SELECTED DRAWING: Figure 4 |
