| 摘要 |
PURPOSE:To eliminate fluctuation of quality by providing an electrode for taking out an ion beam from ion source, an ion separator, focus system, a scanning electrode and an acceleration tube for implanting an ion beam thereby impinging the ion beam uniformly with approximately 90 deg. angle onto the entire face of semi-conductor wafer. CONSTITUTION:An ion beam 24 taken out from an ion source 15 through take- out electrode 16 is separated through an ion separator 17 into target ions and unnecessary ions to irradiate only the target ion beam through the outlet toward a slit. The ion beam radiated from said ion separator 17 will pass through the slit 18 and enter into the focus system 19 where it is focused to place a focus point onto a semiconductor wager 22 then pass between the scanning electrode 20 to be deflected in X-Y directions. The ion beam 24 exited from the scanning electrode 20 will enter into an acceleration tube 21 and accelerated to receive energy of about 100KeV necessary for ion implantation and impinge against the semiconductor wafer 22.
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