| 摘要 |
PURPOSE:To obtain a photoelectric conversion device of good quality while suppressing a film exfoliation phenomenon by piling up amorphous silicon so as not to extend over more than two kinds of foundation materials. CONSTITUTION:In a target construction of an a-Si:H image pickup tube, in which the shape of a transparent electrode is improved, a glass face plate 6 having a diameter of 17.6mm and the thickness of 1.5mm is used as a substrate while piling up about 600Angstrom of transparent electrodes 5 on it. Next, 200Angstrom of SiO2 4 as a blocking film and 2mum of a-Si:H2 as a photoconductive film are piled up. The representative manufacturing condition of a-Si:H is sputtering pressure of about 0.3Pa, hydrogen concentration of 50%, high frequency input of 290W, substrate temperature of about 250 deg.C and film thickness of 2mum. Further, 2,000Angstrom of a Sb2S3 film 1 is piled up as a scanning beam landing layer.
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