| 摘要 |
PURPOSE:To form a second clad layer to a desired thickness with a good yield rate, by laminating a third clad layer, which has a partially second-conducting type, has an Almol ratio larger than that of a protecting layer, and comprises Ga1-xAlxAs, on the protecting layer, and providing an embedded layer, which is laminated on the protecting layer so that the embedded layer is embedded in the third clad layer and comprises first conducting type GaAs. CONSTITUTION:On an N-type GaAs substrate 1, the following layers are sequentially laminated: a first clad layer 2 comprising Sn doped N-type Ga0.6Al0.4As; as active layer 3 comprising non-coped GaAs; a second clad layer 4 comprising Be doped P-type Ga0.6Al0.4As; a protecting layer 5 comprising Be doped P-type Ga0.75Al0.25As; a third clad layer 6 comprising Be doped Ga0.6Al0.4As and a cap layer 7 comprising Be doped P-type GaAs. Then a photoresist film 8, which is extended in the vertical direction with respect to the paper surface, is formed at the approximately central part of the surface of the cap layer 1. With the film as a mask, the third clad layer 6 and the cap layer 7 are selectively etched, and a stripe shape is formed. Then the photoresist film 8 is removed, and N-type GaAs embedded layer 9 is laminated.
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