| 摘要 |
PURPOSE:To prevent warpage of semiconductor wafer and thereby avoid crystal defect by heating a semiconductor wafer being set to a susceptor with a first heating means from the side of front surface and then heating the side of rear surface of the same semiconductor wafer with a second heating means. CONSTITUTION:A halogen lamp 24 is provided, as a first heating means, to the external circumference of a reaction tube 23. At the side surface of circumference of susceptor 25, a plurality of semiconductor wafers 27 are provided. A gas nozzle 28 which supplies the gas into the reaction tube 23 is provided in the axial direction within the susceptor support 26. A high frequency coil 29 is provided, as a second heating means, under the condition as being covered with a high frequency coil cover 30 at the internal side of susceptor 25. This high-frequency coil 29 heats the wafer 27 from the rear side, on the occasion of heating or cooling the wafer 27, simultaneously with said halogen lamp 24 is view of preventing warpage of the wafer 27.
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