| 摘要 |
PURPOSE:To enable the pattern distortion due to the proximity effect to be easily corrected so that a fine pattern can be formed with high precision, by deriving the irradiation offset amount based on the back scattering electrons from the pattern's drawing area factor in each divided region, and calculating the irradiation amount of the electron beam according to the offset amount. CONSTITUTION:In irradiating the resist applied on a substrate with an electron beam to form a pattern, the pattern is divided into a plurality of regions, the irradiation offset amount based on the back scattering electrons of the electron beam is derived from the pattern's drawing area factor in each divided region 1, and the irradiation amount is determined which has been provided with irradi ation correction of the electron beam, according to the irradiation offset amount. The divided region 1 may be the whole pattern, or it may be a division provided by depending on the pattern density. With this, the process can be simplified, the corrected amount can be obtained in a short time which is, e.g., about 1/100 as compared with the conventional external proximity effect correction method, and a fine pattern can be formed with high precision.
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