| 摘要 |
PURPOSE:To automatically flatten an interlayer insulating film and to obtain a prefer able multilayer wiring having no disconnection by growing an insulating film at a faster growing speed than a wiring layer on a portion except a wiring film by a chemical vapor phase growing method with a light reflected by a wiring film and absorbed by the portion except the wiring film as a light source. CONSTITUTION:After wirings 3 of the first layer is formed, an insulating film 7 is grown thickly on the portion except the wiring film 3 and thinly on the film 3 by the difference of temperature rises on the film 3 and on the portion except the film 3 by a light CVD method with a light of wavelength not absorbed to the wiring film 3 but absorbed only to the portion except the film 3 as an exciting light source. For example, when an Si substrate 1 formed with the wirings 3 through an oxide film 2 is mounted in a sample chamber filled with SiH4 and N2O and CO2 laser light 5 is emitted perpendicularly to the sample, a laser light 5 is absorbed to the film 3 to cause the film to rise at the temperature, the thermal reaction of SiH4 gas and N2O gas is acceleratingly induced on the film 2 to grow an oxide film 7. Most of the light 5 is reflected on the film 3, the temperature rise of the film 3 is low, and the growing speed of the oxide film on the film 3 is slower than that on the film 2.
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