| 摘要 |
PURPOSE:To obtain a semiconductor device adapted for a microminiaturization with an electrode wiring film capable of enduring against a high current density with low electric resistance, small step of the wiring film and flat surface by composing the wiring film on an insulating film of a thin polycrystalline silicon film and a thick tungsten film. CONSTITUTION:A laminate of a polycrystalline silicon film 20 and the second insulating film 32 is formed through the first insulating film 18 on the desired region on a silicon substrate 10. Then, the sides of the films 20, 32 are coated with the third insulating films 22, and the surface of the film 20 and the surface of the substrate 10 of the desired region contacted with the film 22 are exposed. Then, tungsten films 24, 26, 28 are selectively accumulated on the surfaces of the exposed substrate and the film 20. Electrode wiring films on the film 18 is formed of a thin polycrystalline silicon film 20 and the first thick tungsten film 28, and an electrode wiring film formed directly on the substrate 10 is formed of the second thick tungsten films 24, 26.
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