发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT FOR READING DATA OF IMAGE SENSOR
摘要 PURPOSE:To decrease the size of the transistor (TR) of an output section by constituting the output section of an impedance conversion circuit with a bipolar TR. CONSTITUTION:An impedance conversion circuit applying impedance conversion to the data signal of an image sensor 1 consists of an output section 11 comprised of a bipolar NPN TR 11c and a differential amplifier 10. A voltage signal from the image sensor 1 inputted by a high input impedance is sent externally from an output terminal 4 through the output section 11 as a data signal. In this case, since the bipolar TR is used for the output section 11, the output of a data signal with low output impedance is attained easily with the TR of a small sized and the parasitic capacitance in the output line is discharged quickly. That is, the bipolar NPN TR 11c is operated even when a slight base current is applied, the parasitic capacitive load of the output terminal 4 is discharged in high speed and a voltage corresponding to the voltage of the image sensor 1 is outputted from the output terminal 4.
申请公布号 JPS61283266(A) 申请公布日期 1986.12.13
申请号 JP19850124826 申请日期 1985.06.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 UCHIDA AKIHISA
分类号 H04N1/40;H04N1/028;H04N5/335;H04N5/374 主分类号 H04N1/40
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