发明名称 FORMING METHOD FOR ACCUMULATED FILM
摘要 PURPOSE:To form a homogeneous a-SiCN film element member which has always stable electrical, optical and photoconductive characteristics, light fatigue resistance, no deterioration phenomenon even at repeated use, excellent durability wet resistance, no remaining potential problem and high uniformity by applying a compound containing carbon and halogen, active species produced by compound containing nitrogen for forming a film in a film forming space, acting thermal energy thereto to chemically react them to form an accumulated film on a substrate. CONSTITUTION:A photosensitive layer 13 is formed similarly to the case of an intermediate layer 12. That is, compound containing carbon and halogen, compound containing silicon and halogen, active seeds produced by compound containing nitrogen for forming a film, inert gas as required, and gas of compound containing impurity elements as components are applied to a film forming space mounted with a support 11. Thermal energy is acted to them to form the layer 13 on the layer 12 formed on the support 11. Thus, a high speed film formation is enabled, the reproducibility in the film formation is improved, the quality of the film is improved, and the quality of the film is equalized. Further, the productivity and the mass productivity of the film are enhanced.
申请公布号 JPS61283110(A) 申请公布日期 1986.12.13
申请号 JP19850124398 申请日期 1985.06.10
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;KANAI MASAHIRO;ONUKI YUKIHIKO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/36;C23C16/34;G03G5/08;H01L21/205;H01L31/0248;H01L31/04 主分类号 C23C16/36
代理机构 代理人
主权项
地址