| 摘要 |
<p>PURPOSE:To make unnecessary a wiring and a pin for resetting and setting in a circuit and to execute high integration by providing a transistor having a threshold voltage higher than a electric power source electric potential at the time of the usual operation of the circuit between the input edge and the ground of a memory circuit. CONSTITUTION:Between an input edge 4a of a memory circuit 4 and a grounding electric potential point 6, a transistor Tr 5 having the threshold voltage higher than the electric potential of an electric power source electric potential 7 at the usual operation time of the circuit 4 is connected, and the gate electrode is connected to the electric power source electric potential point 7 to which the memory circuit 4 is connected. By such a constitution, usually, the Tr 5 does not give any influences to the circuit 4 in the non-conductive condition, and when the circuit 4 is reset and the electric power source electric potential is higher, for example, 5V than the usual potential, the Tr 5 comes to be the conductive condition, the electric potential of the input edge 4a is pulled down to the grounding electric potential, and the memory contents of the circuit are reset are reset. For such a reason, the wiring and the pin for resetting and setting in the circuit are unnecessary and the high integration can be executed.</p> |
