| 摘要 |
PURPOSE:To mass-produce efficiently the title high-performance recording medium having a high vertical-to-horizontal residual magnetization ratio by separating the vertically magnetized film forming process by sputtering into two stages and forming the first thin film and the second thin film respectively at a specified initial incident angle and in specified film thickness. CONSTITUTION:A feromagnetic metal is coated by sputtering on a nonmagnetic substrate 1 traveling at constant speed at an angle smaller than the incident angle theta1 to form the first thin film 21 having >=1 vertical-to-horizontal residual magnetization ratio and wherein crystals can be epitaxially grown. A ferromagnetic metal is coated by sputtering on the first thin film 21 to form the second thin film 22 at an incident angle of theta2b (theta2>>theta1) and crystals are epitaxially grown at t deposition rate considerably higher than that of the first thin film 21. Besides, the first thin film 21 is preferably formed in >=0.07mum thickness with the initial incident angle theta1 of <=15 deg. and a counter target system is favorably used to sputter the ferromagnetic metal. Since the process for forming a vertically magnetized film by sputtering is thus separated into two stages, a thin film having almost >=1 vertical-to-horizontal residual magnetization ratio can be efficiently formed with a high deposition rate.
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