| 摘要 |
PURPOSE:To reduce a damage or a contamination by absorbing etching gas to a layer made of an active material formed on a semiconductor substrate, treating the absorbing material to remove the absorbed portion by the absorbed gas. CONSTITUTION:A layer 2 made of an active material is formed on a substrate 1. Then, at least one layer of film such as 2 layers of a silicon nitride film 31 and a silicon oxide film 32 is formed on the layer 2. Then, a photoresist layer 4 is formed on the films 31, 32. In this case, a patterning for forming a groove is performed. Then, the film 32 is etched, the film 31 is then etched to form a groove 5, and the exposed layer 2 is then exposed with the etching gas. Thereafter, the gas is absorbed to the surface of the layer 2. The gas absorbed portion is treated to remove the absorbed portion.
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