| 摘要 |
PURPOSE:To prevent a depletion layer from extending by providing a platinum silicide having an area larger than metal electrodes, thereby preventing an MOS effect occurring among the electrodes, an insulating film and a polycrystalline silicon. CONSTITUTION:A silicon substrate 1 is oxidized to form an oxide film of the first insulating film 2. Then, a polycrystalline silicon layer is formed on the oxide film, and boron is doped on the entire surface. Then, a patterning is executed to form a polycrystalline silicon layer 4 to become a resistance region. Then, an insulating film 8 is formed on the entire surface, the both ends of the silicon layer are selectively etched larger than aluminum electrodes to be formed in future to expose the silicon layer. Then, a platinum layer is coated, heat treated to form a platinum silicide, and an insulating film is then removed. Thereafter, the second insulating film 3 is formed on the entire surface, selectively opened on the platinum silicide, and a titanium/tungsten layer is further formed. Then, an aluminum layer is formed on the titanium/tungsten, and etched selectively smaller than the silicide 5 to coat the hole.
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