| 摘要 |
PURPOSE:To prevent the reading erroneous operation from occurring due to a noise by even when a noise is applied to a charge transfer gate transferring the light generating carrier of a photodiode. CONSTITUTION:A photodiode formed of the first and second N-type regions 1, 2 is provided in a P-type semiconductor substrate 1. 2 types second region 6 is formed 1n the substrate 1. A charge storage gate 4 provided between the first region 2 and the second region 6 is provided, and the first charge transfer gate 8 for transferring a light generating carrier of a photodiode extensively on the first region 2 to the gate 4 is provided. Further, the second charge transfer gate 5 for transferring charge stored in the gate 4 is provided. Thus, when a noise is applied to the gate 8, a potential phi1 becomes phi8. Since the region 2 is capacitively coupled with the gate 8, the potential phi1 also becomes the potential phi8, becomes the same as the potential of the gate 8, and electrons can not override the potential phi8 under the gate 8.
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