| 摘要 |
PURPOSE:To obtain a contact of small size by forming the first insulator coating region partly on a main semiconductor surface to have side walls at a contact forming position, forming the second insulator on the side wall to coat the main semiconductor surface not coated with the second insulator with the first insulator, removing only the second insulator to form a contact. CONSTITUTION:A P-type base diffused region 202 is formed on the main surface of an N-type silicon substrate or an epitaxial layer 201, and an insulating film (I) 203 of the first insulator is formed to half-coating the region 202 to the emitter contact forming position M of the surface. Then, an insulating film (II) 204 of the second insulator is formed to coat the entirety, and the film 204 is removed except only the side 204a on the side 205 of the film 203. Then, after the film 206 of the first insulator is formed on the entire surface, and the surface is etched flatly. Then, the side wall 204a is selectively removed to form an emitter contact.
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