| 摘要 |
PURPOSE:To realize effective electrode separation with good reproducibility, by forming the different conductive type area from that of its peripheral area on the upper part of an active layer. CONSTITUTION:The double-hetero mesa stripe structure is formed by sequentially laminating a P-type InP clad layer 2, an InGaAsP active layer 3, and an N-type InP clad layer 4 on a P-type InP substrate and applying this lamination to the mesa etching process. A non-dope InP layer 5, a P-type InP block layer 6, an N-type InP layer 7, and an InGaAs contact layer 8 are sequentially laminated on this double-hetero mesa stripe structure. A Zn diffusion layer 11 into which Zn is diffused in this structure to the active layer 3 is formed at the part of about 25mum width toward the resonator axis provided around the central area of this layers-buried semiconductor layer structure. Further, an N-side electrode 12 and a P-side electrode 13 are respectively formed of AuGeNi-CvAu alloy and CvAu alloy. |
