| 摘要 |
PURPOSE:To produce a Permalloy film of excellent magnetic characteristics with good reproducibility even on a substrate having a slope by setting inert gas pressure and target voltage to values of a threshold voltage or lower which abruptly rises in the coercive force of the film in a sputtering method, and applying the negative bias voltage of the substrate to a threshold value or higher decided by the oblique angle of a step to form the film. CONSTITUTION:A target voltage and an argon gas pressure are so set as to satisfy the prescribed conditions, and the variation of the coercive force Hc of a Permalloy film when a negative bias voltage is applied to a substrate is observed. The bias voltage = 0 corresponds to the conventional sputtering method to remarkably increase the coercive force Hc as compared with the magnetic characteristic of the film on a flat substrate having no slope. Then, as the substrate bias voltage is increased, the force Hc gradually decreases to become constant at the certain value to obtain the same characteristic as the force Hc of the film on the flat substrate having no slope. The threshold values of the target voltage, argon gas pressure and substrate bias voltage are obtained at every device.
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