| 摘要 |
A semiconductor device according to the present invention comprises: a plurality of test cell blocks and a plurality of input/output buffer cell blocks arranged in line; detail metal lines which are disposed on each of the test cell blocks and the input/output buffer cell blocks, and are electrically connected to the test cell blocks and the input/output buffer cell blocks; global metal lines which are disposed to cross the test cell blocks and the input/output buffer cell blocks; and local metal lines which are disposed to cross the detail metal lines and the global metal lines on the test cell blocks and the input/output buffer cell blocks, and electrically connect the detail metal lines to the global metal lines, wherein the local metal lines disposed on the test cell blocks are configured to have the same length, and the local metal lines disposed on the input/output buffer cell blocks are configured to have the same length. |
