发明名称 |
THIN FILM FORMATION DEVICE |
摘要 |
PURPOSE:To prevent the fine powder of a reaction product from infiltrating into an exhaust system by positioning an aperture end part of an exhaust port provided to a vessel in a rear side of an opposite face of both an electrode and a substrate. CONSTITUTION:In the inside of a vessel 2, a pipeline 32 is individually connected to an exhaust port 9 and an aperture end part 31 thereof is positioned in a rear side of an opposite face of both an electrode 4 and a substrate 1. Thereby both the Si fine powder 22 of a reaction product which is stuck on an inside wall region 21 of the vessel 2 and an activated seed which is formed in an activated seed generation region 33 of an opposite region of the substrate 1 and the electrode 4 are prevented from infiltrating into the inside of the exhaust port 9. Therefore the inside of the vessel 2 is maintained in the prescribed pressure and an amorphous Si film excellent in film quality is formed.
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申请公布号 |
JPS61281873(A) |
申请公布日期 |
1986.12.12 |
申请号 |
JP19850124615 |
申请日期 |
1985.06.07 |
申请人 |
FUJITSU LTD |
发明人 |
OSAME HIROSHI;ARAKI MAKOTO;UEHARA YUJI;KIYOTA KOHEI |
分类号 |
C23C16/50;H01L21/205;H01L31/0248;H01L31/08 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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