发明名称 THIN FILM FORMATION DEVICE
摘要 PURPOSE:To prevent the fine powder of a reaction product from infiltrating into an exhaust system by positioning an aperture end part of an exhaust port provided to a vessel in a rear side of an opposite face of both an electrode and a substrate. CONSTITUTION:In the inside of a vessel 2, a pipeline 32 is individually connected to an exhaust port 9 and an aperture end part 31 thereof is positioned in a rear side of an opposite face of both an electrode 4 and a substrate 1. Thereby both the Si fine powder 22 of a reaction product which is stuck on an inside wall region 21 of the vessel 2 and an activated seed which is formed in an activated seed generation region 33 of an opposite region of the substrate 1 and the electrode 4 are prevented from infiltrating into the inside of the exhaust port 9. Therefore the inside of the vessel 2 is maintained in the prescribed pressure and an amorphous Si film excellent in film quality is formed.
申请公布号 JPS61281873(A) 申请公布日期 1986.12.12
申请号 JP19850124615 申请日期 1985.06.07
申请人 FUJITSU LTD 发明人 OSAME HIROSHI;ARAKI MAKOTO;UEHARA YUJI;KIYOTA KOHEI
分类号 C23C16/50;H01L21/205;H01L31/0248;H01L31/08 主分类号 C23C16/50
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