| 摘要 |
PURPOSE:To enable the arbitrary control of the specific resistivity of an electrode or a wiring of Al or an Al alloy, by mixing a minute quantity of impurity for forming the Al alloy in an argon ambience when spattering is executed. CONSTITUTION:After the degree of vacuum before Ar replacement is set as high as 1X10<-7>Torr, for instance, the replacement is executed by using an Ar cylinder in which an impurity, e.g. oxygen, for forming an Al alloy is injected in a quantity of several hundreds ppm so as to set the degree of vacuum at about 1X 10<-3>Torr approx., and an Al-Si electrode is formed on a semiconductor substrate through an insulating film by Al-Si spattering and patterning. Thereby the oxygen injected simultaneously with the Ar replacement is made to act with Al atoms in spattering to exist as an oxide such as Al2O3 in an Al-Si film, and thus a film having a large specific resistivity is formed. By controlling the quantity of this oxygen, an Al film having an arbitrary specific resistivity can be obtained. |
