| 摘要 |
PURPOSE:To facilitate formation of an uneven rough surface at the boundary between a light-transmitting electrode layer and a semiconductor photoactivation layer by a method wherein a light-transmitting molybdenum disulfide layer with a rough surface is provided on one of the main surfaces of a light-transmitting insulation substrate before a light-transmitting electrode layer is formed. CONSTITUTION:A light-transmitting electrode layer 3 consisting of a single-layer or laminated-layer structure of light-transmitting conductive oxide (TCO) such as indium tin oxide (ITO), an amorphous silicon based semiconductor photoactivation layer 4 with internal semiconductor junction such as PIN, PN, PI or PINPIN which is parallel to the film surface and a back-plane electrode layer 5 consisting of a single- layer or laminated-layer structure are laminated successively from the side of an insulation substrate 1, which is the side of light incidence, to form a photoelectric conversion film 2 with a laminated structure. An MoS2 layer 6 is formed so as to have a rough exposed surface with fine unevenness before the light-transmitting electrode layer 3 is formed. As the MoS2 layer 6 has good adhesiveness, even if it is formed between the insulation substrate 1 and the photoelectric conversion film 2, it adheres to both of them firmly and is not peeled off. |
