| 摘要 |
PURPOSE:To improve electric, optical, and photoconductive characteristics by applying discharge energy under the coexistence of compounds containing silicon and halogen, and an active species formed from nitrogenous compounds for film growth which chemically interact with compounds. CONSTITUTION:Discharge energy is applied under the coexistence of compounds containing silicon and halogen, and an active species formed from nitrogenous compounds for film growth which chemically interact with compounds. The compounds containing silicon and halogen are introduced into a film growth space whereas an active species formed from nitrogenous compounds for film growth, or an active species formed from silicon compounds or germanium compounds, etc., and compound gas containing inactive gas or impurity elements as constituents as necessary are introduced into the film growth space. Discharge energy is applied to form a sensitive layer 13 on an intermediate layer 12 formed on a supporting body 11, thereby improving electrical, optical, and mechanical characteristics and allowing high-speed film growth. |
