| 摘要 |
PURPOSE:To prevent the abnormal growth of an Al oxide film on a wiring by forming the wiring consisting of aluminum or an aluminum alloy shaped onto a semiconductor substrate and a gold layer shaped onto the wiring exposed from the opening section of a protective film. CONSTITUTION:A wiring 12 composed of Al or an Al alloy is formed onto a semiconductor substrate 11, a protective film 13 consisting of phosphorus glass, a silicon nitride film, etc. is shaped onto the whole surface, and a resist pattern 14 in which an opening is bored to a section corresponding to one part of the wiring 12 is formed onto the protective film 13. The protective film 13 is removed selectively through etching to shape the opening section 15, and a gold layer 16 is formed onto the whole surface. The gold layer 16 in the upper section of the mask material 14 is also removed by eliminating the mask material 14. Accordingly, since the upper section of a pad as the wiring 12 composed of Al or the Al alloy is coated with the gold layer 16, the pad is not exposed directly, thus preventing abnormal oxidation, then obviating the abnormal growth of an Al oxide film on the wiring.
|
