| 摘要 |
PURPOSE:To enable the formation of multiple crystal growth layers having different thickness, in high reproducibility, by placing plural melts in a melt-holder and transferring the melt on a substrate by the aid of a plural intermediate sliders each having plural through-holes to effect the growth of crystal. CONSTITUTION:A multi-layer film producing apparatus composed of a substrate holder 1, a substrate 2, intermediate sliders 6, 7 and a melt holder 3, etc., is inserted into a heating furnace to heat the melts 4, 5 to a specific temperature. The holder 3 is shifted leftward to drop the first melt 4 into the through-holes 8, 10 of the intermediate sliders 6, 7 and cool the melt in the holes. At the same time, the holder 3 is shifted further leftward to separate the first melt 4 in the through-holes 8, 10 from the source crystal 16. When the temperature of the melt 4 reaches the epitaxial growth initiation temperature, the intermediate sliders 6, 7 are shifted together rightward to effect the contact of the melt 4 with the substrate 2 and the growth of crystal on the substrate 2. The holder 3 is shifted leftward to drop the melt 5 into the through-holes 9, 11 of the sliders 6, 7, and the above operations are repeated. The first intermediate slider 6 is shifted rightward to remove the first melt 4 from the substrate 2 and at the same time, to transfer the second melt 5 to the substrate 2 to effect the growth of crystal.
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