| 摘要 |
<p>PURPOSE:To grow each layer constituting double hetero-junctions easily by growing an AlGaAs first clad layer, an AlGaAs active layer and an AlGaAs second clad layer forming the double hetero-junctions in a liquid-phase epitaxial manner in succession after a meltback process. CONSTITUTION:A P-type AlGaAs layer 11 is grown on an N-type GaAs spare substrate 10, and the back side of the spare substrate 10 is thinned up to thickness of approximately 10mum, and used as a current block layer 12. A circular hole 14 for a current path in depth reaching the AlGaAs substrate 11 is formed, and a circular groove 16 is further shaped through etching. A P-type AlGaAs first clad layer 20, a P-type AlGaAs active layer 22 and an N-type AlGaAs second clad layer 24 constituting double hetero-junctions are grown on the exposed surface through the formation of the hole 14 of the AlGaAs substrate 11 and the residual current block layer 12 in a LPE manner in succession. Accordingly, liquid-phase epitaxial growth can be conducted without difficulty onto the AlGaAs substrate, thus improving the crystallizability of each layer being grown.</p> |
