| 摘要 |
PURPOSE:To improve the reliability upon measuring the intensity of molecular beams, while facilitating the cleaning up of device, by a method wherein a heater for heating a growing substrate heater and an ion gauge for measuring the intensity of molecular beams is provided. CONSTITUTION:A heater 15 to heat an ion gauge 12 and a substrate heater 13 for cleaning up is normally contained in a containing boat 16 communicated with a growing chamber 1 to prevent a source material from adhering to the heater 15 by closing a shutter 17 during growing process. The heater 15 fixed on a holding bar 20 is driven by a magnet type linear feeding mechanism 18. The deposit of source material on the ion gauge 12 for measuring molecular beams and the substrate heater 13 can be easily cleaned up by heating the deposit for evaporation, so that the reliability and stability upon measuring the intensity of molecular beams may be improved, and the production of useless dust is restrained to grow compound semiconductor film with high quality.
|
