MANUFACTURE OF HIGH QUALITY SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nondestructive method is proposed for measuring stripe dimensions in order to grade light-emitting structures such as lasers. The width of the near-field emission parallel to the stripe is measured while the laser is operating below threshold. This measurement is correlated with the actual stripe width and with the possibility of kinks developing in the light output. The width of the far-field emission perpendicular to the junction plane can also be measured, and the product of the two widths can be correlated with the stripe area and the possibility of kinks in the laser output.