| 摘要 |
PURPOSE:To eliminate the variation of processing energy density corresponding to the variation of the thickness of a semiconductor film and improve the boundary condition between the semiconductor film and the second electrode film by a method wherein, immediately after the semiconductor film is formed over the whole surfaces of the first electrode films which are arranged separately, the second electrode film is formed and an energy beam is applied to the second electrode film to melt the second electrode film and the semiconductor film and weld the first electrode films and the second electrode film together. CONSTITUTION:A transparent electrode 11 made of tin oxide SnO2 is formed over the whole surface of a substrate 10 made of transparent glass or the like and a laser beam LB is applied to form individual transparent electrodes 11a, 11b, 11c... separately. Then an amorphous semiconductor film 12 made of amorphous silicon or the like, which contributes to photoelectric conversion effectively and has the thickness of 5,000Angstrom -7,000Angstrom , is deposited over the whole surface of the substrate 10 including the surfaces of the respective transparent electrodes 11a, 11b, 11c.... Then a backplane electrode film 13, composed of an aluminum single-layer structure with the thickness of about 4,000Angstrom -2mum, and a double-layer structure of laminated aluminum and titanium, or a quadruple-layer structure of two such double-layer structures, are formed over the whole surface of the substrate 10 including the semiconductor film 12 and the respective exposed parts of the transparent electrode films 11a, 11b, 11c.... |
