| 摘要 |
<p>PURPOSE:To realize with facility a resin-sealed type semiconductor device capable of excellently withstanding temperature cycles by a method wherein a high- malleability metal film is sandwiched between an insulating film and a sealing resin. CONSTITUTION:This resin-sealed type semiconductor device is constituted of a semiconductor chip 3 installed on an island 1 with the intermediary of solder 2, an aluminum wiring conductor film 4 establishing connection between circuit elements, a bonding fine wire 7 connecting an aluminum pad 5 and an external lead 6, an insulating film 8 covering the wiring conductor film 4 and filling the space between conductor films, a high-malleability metal film 9 attached to the insulating film 8 except to the upper portion of the pad 5, and a sealing resin member 10. When the high-malleability metal film 9 is a 1mum-thick simple aluminum film, the film will easily satisfy the temperature cycle requirements of the semiconductor device. When a metal such as gold or silver that is far superior to aluminum in malleability is employed, a film as thin as 0.1mum will suffice.</p> |
