| 摘要 |
PURPOSE:To prevent the increase of OFF currents by each forming a source electrode and a drain electrode onto a semiconductor active layer through a non-doped semiconductor layer having a band gap wider than the semiconductor active layer and a high-doped layer for obtaining an ohmic contact. CONSTITUTION:The whole surface is coated with a resist layer 10 again, only source electrode and drain electrode sections are removed through photolithographic etching, and Al 11 is evaporated onto the whole surface. A source electrode 5 and a drain electrode 6 are shaped, and lastly a P-doped amorphous Si:H high-doped layer 7 is removed while using an Al pattern as a mask by employing CF4 gas. The surface of an amorphous Si1-xCx:H non-doped layer 9 begins to be etched at that time, and the etching of the surface of the layer 9 is completed before an amorphous Si:H semiconductor active layer 4 as the lower layer of the layer 9 is etched. The bonding of the amorphous Si1-xCx:H non-doped semiconductor layer is stronger than that of the amorphous Si:H semiconductor active layer and the former is easy to be acquired as a dense film, thus preventing the increase of OFF-currents. |
