| 摘要 |
PURPOSE:To make it possible to form a high-quality CVD film by coating a light-penetrative thin film of noble metals on the inside of a light-penetrative window for irradiating ultraviolet ray from the outside of an apparatus. CONSTITUTION:A thin film 9 of noble metals is made to coat the inside of a synthesized quartz window 7 for irradiation with ultraviolet ray from the outside of an apparatus so as to prevent the deposition of the reaction products on the synthesized quartz window 7. Thus, when an insulative film such as nitride or oxide film is to be formed on a substrate to be processed, the deposition during CVD reaction is suppressed by a thin film 9 of noble metals with little gas deposition formed on the inside of the window 7. An Si wafer is used as a substrate to be processed 1. While the wafer is heated, mixture gas consisting of 10cc/min of disilane as a reaction gas, 20cc/min of nitrous oxide and 1l/min of N2 as a carrier gas is fed, and the inside pressure of the apparatus is reduced to 200 Pascal by activating the discharge system so as to perform CVD growth, thereby making it possible to form a high-quality CVD film on the substrate to be processed.
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