发明名称 MOLECULAR BEAM EPITAXY APPARATUS
摘要 PURPOSE:To enable the growth of crystal keeping the steep compositional change at the crystal growth interface, by forming the shutter of a molecular beam epitaxy apparatus in a manner that the heat radiated from the crucible is reflected to the outside of the crucible when the shutter is closed. CONSTITUTION:In a molecular beam epitaxy apparatus, cell shutters 5, 9, 10, 14, etc., are placed above the opening of the crucible 2 containing the molten raw material 1. The shutter is formed in a manner that the heat 4 radiated from the content of the crucible is reflected to the direction outside of the crucible 2. The heat radiation 4 returning into the crucible 2 during the crystal growth is eliminated and the temperature variation in the crucible 2 accompanied by the operation of the cell shutters 5, 9, 10, 14 is decreased.
申请公布号 JPS61281098(A) 申请公布日期 1986.12.11
申请号 JP19850121495 申请日期 1985.06.06
申请人 NEC CORP 发明人 TASHIRO YOSHIHARU
分类号 C30B23/08;H01L21/203 主分类号 C30B23/08
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