| 摘要 |
PURPOSE:To improve the interface between insulating-layers and a semiconductor, and to reduce the dispersion of element characteristics by providing a process, in which a first insulating layer is formed to an InP semiconductor layer, a process, in which a second insulating layer is shaped onto the first insulating layer and a process in which electrodes are each formed to a source region and a drain region. CONSTITUTION:When a substrate 1 and a source 2 are grounded, positive voltage is applied to a drain 3 and positive voltage is applied to a gate electrode 6 at that time, electrons are induced in the surface on the gate insulating film 7 side of the InP substrate 1 and an N-type conductive layer is formed, and currents flow between the source 2 and the drain 3. When voltage applied to the gate electrode 6 is changed, the conductivity of the N-type conductive layer is altered, thus controlling currents between the source 2 and the drain 3 by the voltage of the gate electrode 6, then operating a device as a transistor. Double structure of a thin first insulating layer 10a formed before shaping a second insulating layer 10b and the second insulating layer 10b is shaped as a gate insulating film 10, thus improving the interface between the gate insulating film 10 and the InP substrate 1, then acquiring excellent MIS characteristics. Accordingly, the characteristics of the interface among the insulating layers and a semiconductor are enhanced, thus reducing the dispersion of element characteristics. |
