| 摘要 |
PURPOSE:To ensure wire bonding without decreasing response, by forming an HgCdTe layer having a large Hg composition ratio between an HgCdTe layer, which forms a light receiving part, and an electrode, and using an Al electrode as said electrode. CONSTITUTION:On a CdTe substrate 1, a Hg0.8Cd0.2Te layer 2 is grown by a liquid-phase epitaxial growing method, and a light receiving part 6 is formed. On the layer 2, an Hg0.83Cd0.17Te layer is grown by a continuous multilayer liquid phase epitaxial growing method, and a contact layer 3 is formed. On the layer 3, an Al electrode 4 is formed, and a lead wire 5 is bonded. Owing to the continuous growth of the layers 2 and 3, ohmic contact is provided between the layers. Ohmic contact is also provided between the layer 3 and the electrode 4. Since Al is used as the electrode 4, bonding is ensured.
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